Overview of stitching for high NA: imaging and overlay experimental and simulation results

Natalia Davydova; Lieve van Look; Vincent Wiaux; Joost Bekaert; Frank Timmermans; Eelco van Setten; Bram Slachter; Laura Huddleston; Claire van Lare; Rongkuo Zhao; Dezheng Sun; Ming-Chun Tien; Marcel Beckers; Simon van Gorp; Cees Lambregts; Chung-Tien Li; Arthur van de Nes; Koen D'Havé; Tatiana Kovalevich; Diederik de Bruin; Stephen Hsu; Rene Carpaij

doi:10.1117/12.2658511

28 April 2023 Overview of stitching for high NA: imaging and overlay experimental and simulation results

Natalia Davydova, Lieve van Look, Vincent Wiaux, Joost Bekaert, Frank Timmermans, Eelco van Setten, Bram Slachter, Laura Huddleston, Claire van Lare, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Marcel Beckers, Simon van Gorp, Cees Lambregts, Chung-Tien Li, Arthur van de Nes, Koen D'Havé, Tatiana Kovalevich, Diederik de Bruin, Stephen Hsu, Rene Carpaij

Author Affiliations +

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124940Q (2023) https://doi.org/10.1117/12.2658511
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

An increased interest to stitching for High NA EUVL is observed; this is driven by expected higher demand of larger size chips for various applications. In the past a recommendation was published [1] to have 1-5 um band where no critical structures of a High NA layer would be allowed. In [2], we have introduced new insights on at-resolution stitching. In this publication, we present new experimental results obtained on NXE:3400B scanner. In the past we showed NXE feasibility results of vertical lines and contact holes stitching at relaxed resolution (40-48 nm pitch) in a single wafer location. In this study we evaluate stitching behavior through slit at more aggressive resolutions (P36 and P24 lines / spaces). We provide an overview of interactions in the stitching area such as aerial image interactions, absorber reflection, absorber to black border transition, black border vicinity impact and show corresponding experimental and simulations results. We formulate initial requirements for black border edge placement control and show performance of new masks. For stitching with low-n masks, we discuss using sub-resolution gratings to suppress the elevated mask reflectivity. We show rigorous simulations of stitched images, its sensitivity to overlay errors and propose mitigation mechanisms for OPC. Finally, an overview of stitching enablers will be described: from improved reticle black border position accuracy and absorber reflectivity control to mask resolution and OPC requirements.

Conference Presentation

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Natalia Davydova, Lieve van Look, Vincent Wiaux, Joost Bekaert, Frank Timmermans, Eelco van Setten, Bram Slachter, Laura Huddleston, Claire van Lare, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Marcel Beckers, Simon van Gorp, Cees Lambregts, Chung-Tien Li, Arthur van de Nes, Koen D'Havé, Tatiana Kovalevich, Diederik de Bruin, Stephen Hsu, and Rene Carpaij "Overview of stitching for high NA: imaging and overlay experimental and simulation results", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940Q (28 April 2023); https://doi.org/10.1117/12.2658511

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