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Various types of nano- and micro-structures, such as security holograms and diffractive optical elements, can be prepared directly into a photoresist using a direct-write optical lithography. Precise knowledge of photoresist properties, parameters of exposure, and photoresist development time are essential. We have characterized and optimised exposure of the positive binary sensitive photoresist ma-P 1200 series. Complex optical functions were obtained using Mueller matrix spectroscopic ellipsometry. True thickness profile of linearly exposed photoresist was studied by confocal microscopy and strong non-linearity was observed. In this paper we propose exposure correction to compensate this non-linearity.
Tomáš Kohut,Jakub Toběrný, andKamil Postava
"Optimization of exposure parameters for direct laser writing in optical lithography", Proc. SPIE 12502, 22nd Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 125020M (12 December 2022); https://doi.org/10.1117/12.2664190
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Tomáš Kohut, Jakub Toběrný, Kamil Postava, "Optimization of exposure parameters for direct laser writing in optical lithography," Proc. SPIE 12502, 22nd Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 125020M (12 December 2022); https://doi.org/10.1117/12.2664190