Photon detectors are increasingly utilizing quantum features to enhance their performance. Cutting down on dark current by reducing absorber thickness necessitates electron/hole carrier transport engineering to obtain gain via quantum features. Superlattices, barrier-based detectors, and quantum materials such as Floquet engineered systems are poorly served by semi-classical transport modeling approaches and a fully quantum approach is warranted to capture all quantum features from a bottom-up fashion. These effects include non-parabolic and low-dimensional bandstructures, tunneling, resonant transport, dynamic (Floquet) and low-dimensional (Anderson) localization, transport mediation via phonons, plasmons, and photons, as well as various recombination and carrier generation/multiplication methods. In this work we present a systematic framework for quantum transport modeling of detectors via the Non-Equilibrium Green’s Function (NEGF) formalism. This formalism is highly modular in terms of extending the transport related physics, as well robust in handling arbitrary material stack, given a Hamiltonian description. This method has been successfully used in analysis of highly scaled, 2D and nanowire transistor devices, transport in novel quantum materials, and in non-equilibrium thermal transport, and therefore forms a solid foundation for building our platform. However, many open challenges remain in doing so, and in this work, we describe our recent efforts towards advancing this framework for its adoption as a preferred tool for next generation quantum enhanced photon-detectors.
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