Paper
20 January 2023 The study on dark current of InAs/GaSb superlattice longwave devices with unipolar graded barrier structure
Tianyu Cao, Youwen Huang, Junbin Li, Jincheng Kong, Xuchang Zhou, Gongrong Deng, Haipeng Wang, Qiusi Peng, Yu Ao, Yingchun Mu, Zhi Jiang, Dongsheng Li
Author Affiliations +
Abstract
The long-wave InAs/GaSb type II superlattice graded barrier structure was grown by MBE and applied to fabricate the various area diodes. The anodic sulfidization treatment, SiO2 film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and ion beam deposition (IBD) were combined into three methods to passivate the diodes. The variation of dark current density and the forming mechanism as related to diode sizes and measurement temperature was characterized and analyzed. The anodic sulfidization and IBD treated diodes show the worst dark current. The two groups of diodes passivated by anodic sulfidization and ICP-CVD obtained the lowest surface leakage current 3.74×10-5 A/cm2 and 5.08×10-5 A/cm2, the maximal surface resistivity 4.48×105 Ω·cm2 and 9.68×105 Ω·cm2 respectively.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tianyu Cao, Youwen Huang, Junbin Li, Jincheng Kong, Xuchang Zhou, Gongrong Deng, Haipeng Wang, Qiusi Peng, Yu Ao, Yingchun Mu, Zhi Jiang, and Dongsheng Li "The study on dark current of InAs/GaSb superlattice longwave devices with unipolar graded barrier structure", Proc. SPIE 12555, AOPC 2022: Infrared Devices and Infrared Technology; and Terahertz Technology and Applications, 125550Q (20 January 2023); https://doi.org/10.1117/12.2652145
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KEYWORDS
Diodes

Superlattices

Temperature metrology

Infrared detectors

Photodiodes

Oxides

Electrons

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