Large-area growth of high-quality transition metal dichalcogenides for optoelectronics and electronics

Jinbo Pang; Chongyang Hou; Hong Liu

doi:10.1117/12.2662939

12 April 2023 Large-area growth of high-quality transition metal dichalcogenides for optoelectronics and electronics

Jinbo Pang, Chongyang Hou, Hong Liu

Author Affiliations +

Proceedings Volume 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022); 125652Z (2023) https://doi.org/10.1117/12.2662939
Event: Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 2022, Shanghai, China

Abstract

The electronic and optoelectronic properties of 2D materials and their stacking heterostructures have inspired enormous interests. WSe₂, as a p-type semiconductor, represents a foremost building block in the p-n junctions. WSe₂ shall possesses the features of large area, homogeneity, and precise layer control. To date, there is yet an ideal synthesis method ever reported. First, we present a facile approach to prepare high-quality wafer-scale homogenous WSe₂ full films. In brief, we first deposit a thin layer of metal and then do the selenization. We can control the film thickness of WSe₂ in a chemical equilibrium environment. Second, we present a facile approach to prepare high-quality large-area homogenous WSe₂ full films. In brief, we developed a pre-seeding strategy for depositing W-containing precursors over dielectric substrates, which form well-distributed particles as seeding center. Upon the salt-assisted sublimation of tungsten oxides, the WSe₂ forms over the seeded substrates (at high temperature) in the Se-rich atmosphere. Eventually the high quality of the synthetic film has been reflected on the high performances of photodetectors and field-effect transistors. Our finding may pave the way of wafer scale integration of transition metal dichalcogenides in the integrated flexible electronics.

Citation Download Citation

Jinbo Pang, Chongyang Hou, and Hong Liu "Large-area growth of high-quality transition metal dichalcogenides for optoelectronics and electronics", Proc. SPIE 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 125652Z (12 April 2023); https://doi.org/10.1117/12.2662939

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KEYWORDS

Metals

Chemical vapor deposition

Electronics

Transition metals

Optoelectronics

Oxides

Photodetectors

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