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Type-II strained-layer superlattices have theoretically predicted advantages that make them an attractive material system for use in infrared technology. However, the influence of structural disorder has been demonstrated to negatively impact the performance of these materials. A recent development in infrared technology is the use of curved focal-plane arrays which promise improved uniformity of sensitivity and a reduction in the optical complexity of the device. Curving of the wafer introduces mechanical strain into the absorber layer which can also impact the vertical carrier mobility. This work reports on an analysis of the influence of external strain and disorder on the vertical hole mobility in curved focal-plane arrays utilizing a mid-wave InAs/GaSb absorber layers. A series of quantum transport calculations is performed over a range of strain configurations for two different structures: an ideal superlattice and a superlattice with graded interfaces and disorder. Finally, the impact these effects have on the quantum efficiency of a hypothetical curved-FPA is approximated, and a potential avenue for improved device design is suggested.
John Glennon andEnrico Bellotti
"Quantum transport simulation of a mid-wave infrared Ga-based type-II superlattice for curved focal-plane arrays", Proc. SPIE 12687, Infrared Sensors, Devices, and Applications XIII, 126870F (10 October 2023); https://doi.org/10.1117/12.2682192
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John Glennon, Enrico Bellotti, "Quantum transport simulation of a mid-wave infrared Ga-based type-II superlattice for curved focal-plane arrays," Proc. SPIE 12687, Infrared Sensors, Devices, and Applications XIII, 126870F (10 October 2023); https://doi.org/10.1117/12.2682192