Determination of photoionization cross sections, diffusion lengths, and deep-level concentrations in semi-insulating InP and GaAs through energy-transfer measurements

Philippe Delaye; Gerald Roosen

doi:10.1117/12.20461

1 August 1990 Determination of photoionization cross sections, diffusion lengths, and deep-level concentrations in semi-insulating InP and GaAs through energy-transfer measurements

Philippe Delaye, Gerald Roosen

Author Affiliations +

Proceedings Volume 1273, Nonlinear Optical Materials III; (1990) https://doi.org/10.1117/12.20461
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

optical wave mixing in nonlinear media such as photorefractive crystals, semiconductors and liquid crystals have been vigorously studied in the past few years (1-4). Such researches are motived either by potential applications like amplification and phase conjugation, or by investigation on the physics of such effects. Here we report on the generation of conjugate wavefronts by degenerate forward and backward four wave mixing in some GaAs samples. We perform our experiment with a Nd-YAG laser emitting pulses of eight nanosecond duration. The semi-insulating GaAs sample used exhibits a large concentration of EL2 defects which present a good photoionisation cross section at 1.06 micron. The nonlinearity we observed is due to a hole and electron grating photogenerated from the EL2 defects. This is quite different from direct band to band absorption. Indeed, the hole and electron distributions are coupled through the concentration of ionized EL2+ and neutral EL2° defect. Nevertheless, as we will show,at high energy the densities of free electrons and holes tend to be equal due to an evolution of the respective concentration of EL2+ and EL20. This plasma of holes and electrons modifies the plasma frequency. The modulation of the index is then derived from the DrUde Lorentz model. We first present our experimental results .We show that most of them can be explained by the kinetics of the carriers photogenerated from deep levels. Analytical and numerical results are presented. From the numerical simulation, with these numerical results and semi analytical solutions of the wave propagation equations, one then predicts the reflectivity of our multiwave mixing experiment.

Citation Download Citation

Philippe Delaye and Gerald Roosen "Determination of photoionization cross sections, diffusion lengths, and deep-level concentrations in semi-insulating InP and GaAs through energy-transfer measurements", Proc. SPIE 1273, Nonlinear Optical Materials III, (1 August 1990); https://doi.org/10.1117/12.20461

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Crystals

Gallium arsenide

Iron

Absorption

Diffusion

Photorefraction

Nonlinear optical materials

Show All Keywords

Keywords/Phrases

Search In:

Publication Years