Design of reversible tuning MoTe2 field effect transistors with gas molecules adsorption and magnesium doping

Houjie Chen; Zhenhua Wei; Chuyun Deng; Wei Luo; Shiqiao Qin; Gang Peng

doi:10.1117/12.2687012

6 August 2023 Design of reversible tuning MoTe₂ field effect transistors with gas molecules adsorption and magnesium doping

Houjie Chen, Zhenhua Wei, Chuyun Deng, Wei Luo, Shiqiao Qin, Gang Peng

Author Affiliations +

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 1278138 (2023) https://doi.org/10.1117/12.2687012
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

Molybdenum ditelluride (2H-MoTe₂) has attracted extension research interest for its unconventional features and devices application potentials. Field effect transistors (FETs) based on 2H -MoTe₂ usually exhibit ambipolar electric properties, however, integrating both n-type and p-type FETs is of great significance for the device applications. Here, we found that the electric properties of the MoTe₂ FETs could be reversible tuned with gas molecules adsorption and magnesium (Mg) doping. After the gas molecules adsorption, the MoTe₂ FET is p-type doped and shows hole dominant conduction performance. In the vacuum, the p-type performance of the MoTe₂ FET is effectively weakened after the gas molecules desorption. The similar phenomenon happens at the magnesium (Mg) evaporated on the MoTe₂ FETs. After the Mg atoms surface covering, the MoTe₂ FET is n-type doped and shows electron dominant conduction performance. In the air, the p-type performance of MoTe₂ FET is recovered after the Mg oxidation. These results display an effectively method for reversible controlling the MoTe₂ FETs.

Citation Download Citation

Houjie Chen, Zhenhua Wei, Chuyun Deng, Wei Luo, Shiqiao Qin, and Gang Peng "Design of reversible tuning MoTe₂ field effect transistors with gas molecules adsorption and magnesium doping", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 1278138 (6 August 2023); https://doi.org/10.1117/12.2687012

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