Preparation of ZnMgO/ZnO heterojunction by magnetron sputtering method

Yi Wang; Hezeng Li; Xiaoyang Shi; Rui Guo; Enji Jin

doi:10.1117/12.2686792

6 August 2023 Preparation of ZnMgO/ZnO heterojunction by magnetron sputtering method

Yi Wang, Hezeng Li, Xiaoyang Shi, Rui Guo, Enji Jin

Author Affiliations +

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 127813J (2023) https://doi.org/10.1117/12.2686792
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

ZnMgO/ZnO/ZnMgO heterojunctions as well as ZnMgO/ZnO/ZnMgO heterojunctions with low-temperature ZnO buffer layers were prepared on (100) Si substrates by magnetron sputtering. The crystal structures of the heterojunction films grown under the optimized process parameters were good, and the near-band edge emission peaks of the ZnMgO layer were observed in the ZnMgO/ZnO/ZnMgO heterojunction by PL test.

Citation Download Citation

Yi Wang, Hezeng Li, Xiaoyang Shi, Rui Guo, and Enji Jin "Preparation of ZnMgO/ZnO heterojunction by magnetron sputtering method", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 127813J (6 August 2023); https://doi.org/10.1117/12.2686792

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