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For single pulsed laser-matter interactions at sufficiently high intensity, the electron density in the ablated
vapor is large enough to absorb the laser radiation before it can reach the dense target material. The resulting
interaction can be described in terms of energy flows: laser energy is absorbed in the plasma in front of the target
and reappears as thermal electron energy and secondary radiation, part of which impinges upon and heats the dense
target material at the dense material-vapor interface. This heating in turn drives ablation, thereby providing a selfconsistent
mass source for the laser absorption, energy conversion, and transmission. Under typical conditions of
laser intensity, pulse width and spot size, the flow patterns can be strongly two-dimensional. We have modified the
inertial confinement fusion code LASNEX to simulate gaseous and some dense material aspects for the relatively
low intensity, long pulse-length conditions of interest in many laser-related applications. The unique aspect of
our treatment consists of an ablation model which defines a dense material-vapor interface and then calculates
the mass flow across this interface. The model, at present, treats the dense material as a rigid, two-dimensional
simulational mass and heat reservoir, suppressing all hydrodynamical motion in the dense material. The modeling
is being developed and refined through simulation of experiments, as well as through the investigation of internal
inconsistencies, and some simulation of model problems. The computer simulations and additional post-processors
provide a wealth of predictions for possible measurements, including impulse given to the target, pressures at
the target interface, electron temperatures and densities, and ion densities in the vapor-plasma plume region,
transmission and emission of radiation along chords through the plume, total mass ablation from the target and
burn-through of the target material at selected radial locations. We will present an analysis of some relatively
well-diagnosed experimental behavior which has been useful in development of our modeling.
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So2 molecules in a He-seeded molecular beam were electronically excited
with a XeC1 excimer laser and scattered from the basal plane of
graphite in an UHV chamber. Their characteristic scattering features
were measured by counting those molecules which radiate after scattering.
The survival probability of SO2 scattered from graphite is
2.5 * lO-. This implies that the probability of detecting excited
molecules which have collided twice on the surface is already negligible.
In this favourable case, the dynamics of scattering can be
described with a hard cube model. The parallel component of the momentum
is conserved, whereas the perpendicular component in our case
is reduced to almost half of its initial value.
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The integral equation formalism previously used by the present authors to describe scattering of monochromatic
light from a few atomic dipoles on a flat metal surface is used to investigate the properties of the electric field on the
sites of the dipoles. By treating the light-induced radiation from an atom in the electric dipole approximation a set
of linear equations which allows us to determine the electric field on the atomic sites selfconsistently is established.
The contributions to the selfconsistent field from radiative and nonradiative modes and from the excitation of surface
polaritons are described. In the final chapter of our paper a number of numerical results for the case where the
incident electric field is p-polarized are presented. Using dielectric data for Al a detailed analysis of the frequency
dependence of the electric field on the site of one of the dipoles is undertaken.
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The effect of CO2 laser focised radiation (the wavelength of
1O.6,ii't , power density of io 10 VJ/crnt) quartz by method of
electron spin resonance (ESR) has been investigated. ESR spectra of
crystallic powder (particle size of iO..iOO,M) befor and after laser
irradiation at the room temperature have been registrated. Irradia-..
tion of 1O.6,Mlead to appearance of intensive wide asymmetric line
( '& H - 90 iiiT , g '-' 2 , 5 ) and more slight narrow line on the right side
of wide line with g=1.943. Appearance of wide line with g2.5 is
connected with activisation of paramagnetic centra on the surface
of desorienting powder particles. More narrow line with g=1.943 is
due to distru.ction of bonds inside of network in region of laser
radiation penetration depht.
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Though subaquatic explosions have been the subject of many studies, the interaction of the subaquatic shock
wave with the liquid air interface is not well known, particularly in its earliest effects. In particulary, microscopic and
precocious events occur during the acceleration of the free surface of the liquid.
Several techniques (fast camera, image convector, schlieren and ombroscopic records,...) have been used to record
the main phenomena in water and surface motion. The free surface motion details have been observed by holographic
techniques which appeared very suitable for the description of the first phenomena. We used light sheet for the
observation of latter events, plume and its composition.
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Laser-assisted processing is one of the most efficient methods to induce ultrafast reactions in
polymer films. The photopolymerization of acrylic systems is shown to occur almost instantly by
simple exposure to a pulsed or CW laser emitting in the UV range. The kinetic profile of the reaction
was directly recorded in the millisecond timescale by using the newly developed real-time infrared
(RTIR) spectroscopy. The important kinetic parameters have thus been determined, such as the actual
rate and quantum yield of the polymerization, the sensitivity and the contrast of the photoresist. Timeresolved
JR spectroscopy is particularly well suited to study the kinetics of any polymer system
undergoing ultrafast chemical modifications upon laser irradiation. Compared to the other analytical
methods used in kinetic analysis, R1'IR spectroscopy proved to be more sensitive and reliable, while
providing instantly quantitative information about the actual extent of reactions that develop within a
fraction of a second. The strongly crosslinked polymers obtained by laser irradiation exhibit remarkable
properties, in particular an outstanding resistance to chemicals, organic solvents, heat and laser
radiation. The main sectors of application of this laser technology are expected to be found in
microelectronics for the high-speed writing of complex patterns at sub-micronic resolution, in
stereolithography for the creation of 3 D solid objects and in optical engineering for the ultrafast coating
of glass fibers and the production of laser-resistant optical components.
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For a quantitative description of the ablation of polyimide by excimer laser pulses in the nanosecond range, the concept of a moving surface during the pulse and of the shielding of its trailing edge by the plume is very essential. In a recent publication by Mahan et al.(1989) the concept of a moving interface was solved analytically. The main purpose of this paper is to include here the shielding effect. It will be shown that the resulting analytical formula describes most experimental data with surprising accuracy.
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Processing of S13N4 arid Zr02 ceramics was rerformed by using ArF , KrF and XeF
excimer lasers with mainly mask projection, and characteristics of ceramic processing
and surface appearance were analyzed. Focused excimer laser beam from unstable
resonator was also used for cutting, and compared with focused c02 and YAG lasers of
nonnal pulse.
Material removal process of excimer lasers was compared with O2 and YAG lasers of
normal pulse on the basis of energy analysis, X-ray diffraction and spectral analysis
during ablation of Si3N4 . It was found that in material processing by 002 and YAG
lasers, Si3N4 is decomposed into N and liquid Si, which attaches to the surface,
producing roughened surface with cracks . On the other hand, in excimer laser
processing, Si3N4 is decomposed into Si. (g) and N with accompanying ionized Si by its
high peak power , resulting in excellent quality of processing without deposition of
decomposed materials . The mechanism of uneven laser processing in Si3N4 and Zr02
ceramics was also discussed.
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High purity, ultrafine Si, SiC and Si N4 powders have been produced from gas phase
reactants (SiH, hydrocarbons, NH3) in a C2 laser induced process. Optical on-line diagnostics
have been performed to investigate the reaction mechanism in the gas phase. Final product
chemical analysis has been employed to check the formation of stoichiometric compounds.
Morphologic and crystallographic characterizations of the powders have been performed in order
to establish their phase composition, their micro-structure and to understand the growth
mechanism which is mostly affected by laser power and residence time.
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Although laser cladding has been accepted by industry as one of the methods for the improvement of material surface
properties, it is always difficult to produce consistent products over long periods. The reason for these could be the
instability of laser parameters, powder feeding parameters (when powder feeder is used) and the rise of substrate surface
temperature during processing. This paper investigates the possibility of using an opto-elecironic sensor for in-process
monitoring of clad quality. The experiments have revealed that clad bonding condition, clad porosity, clad uniformity (i.e.
clad roughness, thickness variation and overlap consistency), substrate faults and system failure (e.g. nozzle clipping, lens
cracking, powder feed failure ) etc. could be recognized by the optical signals from the melt pool radiation picked up by the
sensor during processing. The use of the sensor for on-line laser cladding fault diagnostic and quality control is also
discussed.
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The interaction of an Excimer laser with an aluminum surface was studied by a characterization of the blowoff plasma
plume. The SDIOIMLI Two-Meter Laser, operating at XeF and KrF wavelengths, was used to illuminate mm sized spots
on aluminum targets at fluences of 400 - 1250 J/cm2 for 1 .8 ps. The resultant plasma was characterized by numerous
techniques. The temperature of the plasma as a function of distance out in the plume was measured by both a modified line
reversal technique and spectral methods. The absolute ion density was measured as a function of distance out in the plume
by a laser absorption technique. The temperature in the blowoff plasma plume was found to be relatively constant, dropping
by approximately 50% in 1 cm. The density, however, fell by an order of magnitude in the same distance. The measured
results agree with predictions from the 2-D Hydrocode STREAK.
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Thin selenium films are irradiated in air by means of an excimer laser beam
(wavelength 248 nm). The fluence threshold for plasma formation is measured as a
function of the thickness of the film (20 to 230 nm) and the nature of the substrate
(glass, quartz, sapphire). The fluence threshold, F(2), varies in the range
0.5-3.5 J.cm2. At low fluences, films are totally ablated after a certain number
of pulses. This number decreases with increasing fluence, independently of the
initial thickness of the film. Experimental results are compared with numerical
simulation of temperature where the role of the film thickness and the nature of the
substrate are introduced.
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Some basic aspect concerning spectroscopic determination of electronic density and temperature of
high power (1KW to 10KW) laser-induced iron plasmas are discussed. Spatial evolution of the temperature
into the key hole and above the target has been measured for different shielding gases and different
power densities. At power densities of the order of 1.0-2.0 MW/cm2 the evolution of the temperature
with the height over the target depends strongly on the shielding gas. Some spectral lines identified
as corresponding to Fe(II) transitions have also been observed. From the measured temperatures and
relative intensities ratios between lines corresponding to Fe(I) and Fe(II) , electronic densities have been
calculated.
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The non-equilibrium evaporation of metals is increasingly important in recent applications of high
intensity power sources such as lasers, electron beams and arc heated plasmas. Powerful jets
of evaporated metal arise when cw-lasers or pulsed laser beams are used, especially in surface
processing, ablation and sublimation cutting.
An exact understanding of the physical conditions in this evaporation jet is essential to control
the ablation rate and minimize the energy loss due to evaporation by adjustment of the external
process parameters. The ablation jet is maintained by an appropriate supply of newly evaporated
particles and in effect sets the boundary conditions for the hydrodynamic or plasma regime that
arises. Exact knowledge concerning the metallic vapour that constitutes the plasma which arises
in a wide variety of material processing techniques with a high intensity beam allows to predict
the ignition behaviour of the plasma vapour. This is a particular advantage since the presence
of the plasma can totally change the physical behaviour of the process. In high intensity beam
welding processes a narrow keyhole appears filled with metallic vapour whose behaviour does not
depart too strongly from equilibrium. The plasma which is detected in the keyhole is important
for the energy transfer from the incident beam to the workpiece1, so that in this case the physical
conditions in the vapour are of special interest, as they determine the development of the plasma.
When a metal surface is heated to a temperature close to the boiling point of the material of
which it is composed, a jet of evaporated material originates at the metal surface. Depending on
the surface temperature and the external pressure, the evaporation process ranges from a steady
state of thermodynamic equilibrium which describes a vapour with constant spatial density and
temperature, and no significant net motion, to one involving a strong non-equilibrium process with
a velocity up to the local speed of sound. In all but the equilibrium case, however, a thin surface
layer, known as the Knudsen layer, forms in the vapour. The transition from a non-equilibrium
velocity distribution at the metal surface to a local Maxwell-Boltzmann distribution some few
mean free paths above the metal surface occurs in this layer.
This non-equilibrium regime is described by Boltzmann's equation which is solved here in the
BGK approximation. This is achieved by employing an iteration algorithm for the solution of
an equivalent integral equation with suitable boundary conditions. The temperature, density and
velocity either in or behind the Knudsen layer are derived together with the velocity distribution
function everywhere in the layer.
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The laser deposition of textured thin films was investigated for
different degrees of crystal complexity. At the target high laser
pulse energy density in a homogeneously illuminated spot is required
throughout for stoichiometric material transfer to the substrate. The
epitaxial growth is controlled by the substrate terrrperature within a
narrow range; the simple MgO structure does not need a crystalline
substrate. Fragments volatile in the ablation process may be supplied
from the background gas, as oxygen for YBaCuO. Some applications will
require large area deposition. This has been accomplished by greater
target-to-substrate distance without film deterioration, and by translational
motion through the plasma cone.
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Conventional (thermal) CVD of Si02 is a well established method
widely used e.g. in the microelectronic industry. Recognizing the big
success of CO2 laser induced CVD in depositing high quality
amorphous silicon (a-Si) films from silane it is quite surprising
that -to the best of our knowledge- there has been no report on a-SiQ
thin film deposition initiated by a cw CO laser in parallel
configuration.
In this contribution we report the first results of a systematic
study on cw CO2 laser induced CVD of silicon oxide films onto silicon
wafers from SiH I N20 I Ar gas mixtures in parallel configuration in
comparison with similar experiments for a-Si film formation. Gas
mixture absorption behaviour and total pressure rise under laser
irradiation demonstrate that the SiO production can be due to
homogeneous gas heating similar to the a-Si:H deposition. The films
deposited are characterized by IR transmission spectroscopy.
The fact that well adhering silicon oxide films can be produced
with reasonable growth rates by using a simple and inexpensive laser
makes this method attractive for industrial applications.
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Besults of a systematic study on Q-switched nthy laser induced rrrn2 area transfer
of supported titanium and chranium thin films and Ge/Se multilayer structures are
reported. The appearance of the prints is governed by film-support adhesion and
source-target spacing. Best quality prints are produced by ablating well adhering
ntal films in close proximity ( spacing < 15 pm) to the target to be patterned.
Transfer fran stacked elenntaxy layers as a source offers a unique possibility of
depositing acinpound films by mixing the constituents and transferring the material
onto the target substrate in a single step.
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Nickel silicides have been grown on single crystal silicon sub-
strates. A XeCl excimer laser was used for all process steps: substrate
cleaning, nickel deposition , silicide formation and
annealing. The nickel films were grown by photodecoxnposition of
Ni(CO)4 adsorbate layers with an excess of CO to prevent homogeneous
nucleation and hence the formation of dust. The samples were
analysed by X-ray fluorescence, SIMS and RBS. The results indicate
that epitaxial silicide layers with a thickness of 50 ma can be
obtained after careful choice of laser fluence and Ni film
thickness.
In an alternative approach we used a molecular beam of Ni(CO)4, part
of which is laser excited prior to impinging on the substrate. This
allows the combination of CVD and conventional MBE techniques. In
this experiment we also investigate the interaction of
photofragments with substrate surfaces and other processes responsible
for material deposition.
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Laser-photolysis of tetramethyltin Sn(CH?)4 (TMT) is very interesting being this molecule an
attractive precursor for laser photodeposition of Sn thin films. Efficient dissociation and
ionization are obtained irradiating the organometallic with the ArF laser beam, being the energy
of one photon at 193 nm resonant with the first TMT absorption band. At low laser radiation
density, the observation of the Sn(CH3) dominating the mass spectrum shows that
photolysis is initiated by the elimination of one methyl group. The relative abundance of lighter
SnCH3 and Sn ions is strongly depending on the energy density. Neutral photoproducts of the
1Jv photolysis are sampled by dye-laser-induced resonant Multi-Photon Ionization (MPI); suitable
wavelengths are identified through visible MPI in the 370-410 nm range. Furthermore neutral
CH3 fragments are detected by ZR+l ionization induced at 333.5 nm. Varying the delay between
the UV and the probing laser pulses, informations on the reaction dynamics are achieved. The
presence of a strong dissociative channel evidenced by the two-colour ionization experiments
demonstrates the suitability Qf TMT as metal precursor for ArF laser induced deposition of Sn
and Sn-containing films.
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We report a study of the formation of nitride surface layers on
semiconductor (Si) and metal (Ti) samples by multipuise (up to 2500)
XeC1 excimer laser (A=308 nm) irradiation in N2 and NH atmosphere.
After irradiation the samples were examined by optical and electron
microscopy (SEM) . and then analyzed by Rutherford backscattering spectroscopy
(RBS) , nuclear reaction analysis (NRA) , Auger and X-ray photoelectron
spectroscopy (XPS) to positively identify the formed cornpounds.
The electrical characteristics of the laser synthesized
nitride layers were also measured. The amount of nitride has been
observed to depend on the number of subsequent laser pulses and on the
nature of the ambient gas.
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Many optical recording media have been investigated since a few
years, but none appears to be fully suitable for WORM optical disk. Te
and its alloys have been studied. For alloys, contrast is obtained by
crystallization of the amorphous initial film. The constrast is low
because it is only due to a difference in structure between the irradiated
and non-irradiated zone. We propose a sensitive layer made of
thin films of Cu and Te, in 1:1 atomic proportion '. As it is well
known, laser annealing of thin sandwich films of that kind allows the
synthesis of crystalline compounds. Contrast, in this case, is high
due to synthesis of the semiconducting compound CuTe, with optical
properties (both in transmission and reflection) quite different from
the non-irradiated film ones. A study is made of the irradiation conditions
(power density), of the reduction to im scale spots and of the
optimization of the contrast. The stability of the layer is also studied
by ageing procedure. In particular, we demonstrate the feasibility
of a WORM glass disk with this coating. The disk is irradiated with a
830 nm solid state laser diode, pulsed at a frequency of .1 MHz, with
instant power within the range 7-10mW. Spots with a diameter in the i.tm
range were obtained. Long term stability of the virgin layer makes the
technology described here a convincing competitor in the WORM disk
market.
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High gain of active media of pulse metal vapour lasers in addition with their specific properties gives a unique possibility to use the same active elements not only for image aniplification but simultaneously for creating strong laser beams, processing the object to be observed.
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Many organic materials are used in the electrical and electronics industries.
However, even thin layers of organics on electrical contacts can lead to high
resistance problems. The use of an excimer laser in removing organic contamination
has been studied. Excimer laser radiation successfully removed rosin flux and
polyimide materials from deliberately contaminated test coupons. Laser cleaning of
unknown organics and an inorganic silver sulphide tarnish film from relay contacts
was also accomplished. A study of endpoint detection methods for laser cleaning
will also be discussed.
Excimer laser flash melting of unpiated and thin gold plated connector contacts to
reduce porosity will also be reported.
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