Paper
1 August 1990 Relationship between the one-electron mechanisms for the intensity dependence of the refractive index of a semiconductor
M. G. Burt
Author Affiliations +
Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20641
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
The relationship between the three main one electron mechanisms that lead to an intensity dependence of the refractive index of a semiconductor namely the band filling effect, virtual interband transitions and the motion of free carriers in a nonparabolic band, is investigated theoretically. The semiconductor is modelled as an ensemble of independent two level electron systems and its nonlinear response to a light pulse is evaluated algebraically. In particular, it is shown (i) how the dependence of the dephasing time on optical frequency allows a smooth transition from the band filling regime to the virtual transitions regime and (ii) how the nonlinear motion of free carriers in a nonparabolic band is related to the nonresonant optical Stark effect.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Burt "Relationship between the one-electron mechanisms for the intensity dependence of the refractive index of a semiconductor", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20641
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KEYWORDS
Refractive index

Semiconductors

Polarization

Nonlinear optics

Refraction

Complex systems

Transient nonlinear optics

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