Paper
1 August 1990 Gamma -> L intervalley and polar optic scattering times in GaAs from cw hot electron luminescence spectroscopy
Wolfgang K. P. Hackenberg, Gerhard Fasol, Elisabeth Bauser, Klaus H. Ploog
Author Affiliations +
Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20708
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We deduce the F-L intervalley and poiar optic phonon scattering times of hot electrons in bulk GaAs from cw hot (e, A°) luminescence spectra as a function of electron kinetic energy at low excitation densities. We obtain the lifetime broadening due to these two processes from comparison with lineshape calculations using a 16x16 k.p Hamiltonian, a full integration over k-space and a dipole model for the optical matrix elements. We find for the LO-phonon emission time tLO=(l32±lO)fS. The threshold for IT-*L scattering is determined as (330±1O)meV, above which a distinct decrease in total lifetime is observed. Minimum F÷L scattering times are l5Ofs to 200fs. We discuss an estimation for the deformation potential DTL.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang K. P. Hackenberg, Gerhard Fasol, Elisabeth Bauser, and Klaus H. Ploog "Gamma -> L intervalley and polar optic scattering times in GaAs from cw hot electron luminescence spectroscopy", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20708
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KEYWORDS
Scattering

Luminescence

Phonons

Gallium arsenide

Laser scattering

Semiconductors

Spectroscopy

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