Paper
1 October 1990 MBE growth and electronic properties of planar superlattices consisting of grid-inserted heterostructures
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20752
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We emphasize the importance of fabricating planar superlattice (PSL) structures with the lateral dimension of 100A, in which most carriers are accommodated in sharply defined ground level. Furthermore, we review our recent studies on the molecular beam epitaxial (MBE) growth and electronic properties of novel planar superlattice (PSL) structures, in which an array of monolayer(ML) thick AlAs bars with period of 80-160A is inserted in GaAs layer. These grid inserted heterostructures (GIHSs) are prepared by depositing 0. 5 monolayer of AlAs during the growth of GaAs on misoriented substrates. We have found anisotropic electronic structures reflecting misorientation induced atomic terraces in both optical and electronic properties, which are in good agreement with theory. This demonstrates that the PSL states are formed in our GIHSs.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Tanaka, Junichi Motohisa, and Hiroyuki Sakaki "MBE growth and electronic properties of planar superlattices consisting of grid-inserted heterostructures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20752
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KEYWORDS
Gallium arsenide

Heterojunctions

Superlattices

Quantum wells

Polarization

Physics

Electrons

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