Paper
1 October 1990 In-situ nanostructure fabrication using finely focused ion beams
Lloyd R. Harriott
Author Affiliations +
Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20782
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Nanostructure fabrication for optoelectronic and quantum-effect devices can benefit from the greatly improved surface layer quality and low contamination offered by all vacuum processing. Finely focused ion beams can be used in a variety of ways for vacuum-compatable patterning on a nanometer size scale offering the potential of patterned devices with clean epitaxial interfaces and low dimensional confinement Several of these ion beam patterning techniques will be reviewed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lloyd R. Harriott "In-situ nanostructure fabrication using finely focused ion beams", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20782
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KEYWORDS
Ion beams

Etching

Ions

Oxides

Electron beam lithography

Nanostructures

Semiconductors

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