Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra

Christopher Pickering; Derek C. Houghton; Jean-Marc Baribeau

doi:10.1117/12.20875

1 August 1990 Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra

Christopher Pickering, Derek C. Houghton, Jean-Marc Baribeau

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20875
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Optical transitions in the range I .9—4.3eV have been observed in Si:Ge superlattices by spectroscopic ellipsometry (SE) and electron—beam electroreflectance (EBER). Interference is shown to play an important role in both techniques, leading to complications in • interpretation. Strong features may be produced both by multiple reflections from capping layers and from buried growth imperfections.

Citation Download Citation

Christopher Pickering, Derek C. Houghton, and Jean-Marc Baribeau "Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20875

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available