Presentation + Paper
8 March 2024 Detecting long-wave infrared in metal-silicon-metal photodiodes
Tianyou Li, Omer Emre Ates, William P. Putnam
Author Affiliations +
Abstract
Electromagnetic radiation in the mid-infrared portion of the spectrum is critical for sensing and spectroscopy. However, detecting mid-infrared radiation is challenging. Typically, mid-infrared detectors rely on photon absorption in exotic semiconductor structures, or they use relatively slow (low-bandwidth) thermal effects. Here, we demonstrate the detection of long-wave infrared laser pulses in metal-semiconductor-metal photodiode structures. The pulses span the spectral range from 7-12 microns and have pulse energies <1 nJ. Our detectors consist of gold and titanium nanoantenna emitters resting on an intrinsic silicon substrate and separated by sub-micron gaps from collector electrodes. Operating at room temperature, our detectors yield >2 μA currents and exhibit bandwidths exceeding 1.3 GHz.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tianyou Li, Omer Emre Ates, and William P. Putnam "Detecting long-wave infrared in metal-silicon-metal photodiodes", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950F (8 March 2024); https://doi.org/10.1117/12.3002861
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KEYWORDS
Mid infrared

Sensors

Photodiodes

Nanoantennas

Pulsed laser operation

Silicon

Infrared radiation

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