Presentation + Paper
13 March 2024 Recombination kinetics in polar InGaN/GaN structures with wide quantum wells
Author Affiliations +
Abstract
We have investigated the kinetics of photoluminescence (PL) of so-called “wide” 25-nm In0.17Ga0.83N quantum wells (QW), where the studied 450 nm emission comes from excited states of the QW. These states are very closely separated and are therefore considered as a quasi-continuum of "bulklike" states. The recombination kinetics shows clear exponential behavior with time constants of 1...2 and 7...9 ns at 5 and 300 K, respectively, a behavior which indicates the dominance of radiative recombination. However, if the decay curves are resolved spectrally, a variety of kinetics is revealed, the appearance of which is likely determined by a slower energy relaxation of the photoexcited carriers in the "wide" QW. The results point to a route to improved polar optoelectronic device architectures based on “wide” QWs.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Jens W. Tomm, Artem Bercha, Grzegorz Muzioł, and Witold Trzeciakowski "Recombination kinetics in polar InGaN/GaN structures with wide quantum wells", Proc. SPIE 12905, Novel In-Plane Semiconductor Lasers XXIII, 1290503 (13 March 2024); https://doi.org/10.1117/12.3000148
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KEYWORDS
Quantum wells

Picosecond phenomena

Emission wavelengths

Optoelectronic devices

Quantum emitters

Temporal resolution

Visible radiation

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