Mid-infrared InP photonic integrated circuits

Seungyong Jung; Nishant Nookala

doi:10.1117/12.3005067

13 March 2024 Mid-infrared InP photonic integrated circuits

Seungyong Jung, Nishant Nookala

Proceedings Volume 12905, Novel In-Plane Semiconductor Lasers XXIII; 129050K (2024) https://doi.org/10.1117/12.3005067
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Our mid-infrared integration platform allows for seamless monolithic integration of low-loss InGaAs passive waveguides with high power InGaAs/AlInAs quantum cascade laser (QCLs) active regions. Efficient light coupling between the active region and passive waveguide is achieved by using an adiabatic taper. We present a single monolithic waveguide-coupled device producing 1.2 W output power under pulse mode operation at room temperature, and a wavelength-tunable photonic integrated circuit (PIC) with tuning range of 7.5 cm^-1 at 4.6 μm. Our PIC exhibits excellent output power stability over its entire tuning range, a feature unachievable with conventional QCL devices.

Citation Download Citation

Seungyong Jung and Nishant Nookala "Mid-infrared InP photonic integrated circuits", Proc. SPIE 12905, Novel In-Plane Semiconductor Lasers XXIII, 129050K (13 March 2024); https://doi.org/10.1117/12.3005067

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