Carbon/boron multilayer for beyond EUV lithography

Umi Fujimoto; Tetsuo Harada; Shinji Yamakawa; Takeo Watanabe

doi:10.1117/12.2688244

29 September 2023 Carbon/boron multilayer for beyond EUV lithography

Umi Fujimoto, Tetsuo Harada, Shinji Yamakawa, Takeo Watanabe

Proceedings Volume 12915, Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology; 129150M (2023) https://doi.org/10.1117/12.2688244
Event: Photomask Japan 2023, 2023, Online Only

Abstract

In 2019, EUV lithography technology with a wavelength of 13.5 nm was first applied to mass production of 7 nm+ node logic devices. In the future, since semiconductor devices with higher-density electronic circuits are required, beyond EUV (BEUV) lithography technology with an exposure wavelength around 6.7 nm is expected to utilize as the next generation lithography. The development of multilayer with high reflectivity is a critical issue for BEUV lithography. La/B-based multilayers were reported as a high theoretical reflective multilayer. However, the stability of the reflectance of La/B-based multilayers is low because of the high reactivity of La material. Thus, we propose carbon/boron (C/B) multilayer for BEUV multilayer. The C/B multilayer has a high theoretical reflectance of approximately 80%, which is comparable to the La/B multilayer. The optical constant of the carbon film depends on its density, and high density is required to obtain high reflectance and wide reflection bandwidth. For the C/B multilayer performance estimation, we deposited carbon and boron monolayer films and measured the actual optical constants at BEUV light using a reflectometer at the NewSUBARU synchrotron light facility. We discuss the performance of the C/B multilayer using the measured optical constants.

Citation Download Citation

Umi Fujimoto, Tetsuo Harada, Shinji Yamakawa, and Takeo Watanabe "Carbon/boron multilayer for beyond EUV lithography", Proc. SPIE 12915, Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology, 129150M (29 September 2023); https://doi.org/10.1117/12.2688244

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Multilayers

Reflectivity

Carbon

Interfaces

Lanthanum

Argon

Extreme ultraviolet lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years