On the compatibility of free-electron lasers with EUV scanners

Christopher N. Anderson

doi:10.1117/12.3012412

10 April 2024 On the compatibility of free-electron lasers with EUV scanners

Christopher N. Anderson

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 129530T (2024) https://doi.org/10.1117/12.3012412
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

The compatibility of Free-Electron Lasers (FELs) with Extreme Ultraviolet (EUV) scanners is a pivotal consideration as EUV lithography advances. Unlike plasma sources that emit incoherent light, FELs offer relatively coherent light with distinct characteristics including narrower bandwidth, higher repetition rates, and shorter pulse durations. This study elaborates on the integration process of FEL sources with existing scanner systems without necessitating modifications to the scanner’s illumination or projection optics. We delve into the coherence and speckle considerations crucial for maintaining image quality and minimizing defects in photolithography. Our findings reveal that the spatio-temporal splitting of FEL pulses, facilitated by the scanner’s illumination system, effectively mitigates coherence and speckle-related challenges. Moreover, the analysis of potential pulse damage reveals that despite the high peak power of FELs, the design of the scanner ensures that the risk of damage to optics is minimal. This research shows that it is practical and possible to use FEL sources in EUV scanners, enhancing their performance and efficiency in semiconductor manufacturing.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Christopher N. Anderson "On the compatibility of free-electron lasers with EUV scanners", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530T (10 April 2024); https://doi.org/10.1117/12.3012412

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