Poster + Paper
9 April 2024 Application of higher absorption materials to the underlayer of EUV lithography
Author Affiliations +
Conference Poster
Abstract
In the application of extreme ultraviolet (EUV) lithography, stochastic defects are one of the fundamental issues, and the improvements of the sensitivity of resist materials are one of the requirements for the application of EUV lithography process to the future nodes. As reported before, as the absorption of EUV photons depends on the species of element in each material, we have studied introducing the iodine element to lithography materials for the sensitivity issues in EUV lithography process. On this report, the studies of the effect of applying the iodine-containing material to the underlayer of resist film are shown by monitoring the mechanism of the chemically amplified resist system and the evaluation the performance of patterning.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Tadashi Omatsu, Sachiko Shinjo, Masatoshi Echigo, Yuki Ishimaru, and Takahiro Kozawa "Application of higher absorption materials to the underlayer of EUV lithography", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295723 (9 April 2024); https://doi.org/10.1117/12.3012067
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KEYWORDS
Extreme ultraviolet lithography

Absorption

Extreme ultraviolet

Photons

Electrons

Photoresist processing

Iodine

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