Strain-engineered GeSn microlasers with lithographically adjustable emission wavelengths

Melvina Chen; Hyo-Jun Joo; Eng-Huat Toh; Elgin Quek; Zoran Ikonic; Wei Du; Shui-Qing Yu; Donguk Nam

doi:10.1117/12.3017723

20 June 2024 Strain-engineered GeSn microlasers with lithographically adjustable emission wavelengths

Melvina Chen, Hyo-Jun Joo, Eng-Huat Toh, Elgin Quek, Zoran Ikonic, Wei Du, Shui-Qing Yu, Donguk Nam

Author Affiliations +

Proceedings Volume 13002, Semiconductor Lasers and Laser Dynamics XI; 1300209 (2024) https://doi.org/10.1117/12.3017723
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

GeSn alloys hold the promise for the development of on-chip, scalable, industry-compatible light sources. Here, we introduce a novel strain engineering approach to create tensile-strained GeSn microlasers. Through a unique lithographic design, the initially harmful compressive strain intrinsic to the GeSn layers is converted to the beneficial tensile strain and amplified on the GeSn microbridges. By tuning the design parameters of the microbridges, multiple lasers with different tensile strains were achieved on a single chip. We anticipate that increasing the tensile strain will lead to a shift in the lasing wavelength and an improvement in the laser threshold. This work presents a straightforward and cost-effective solution for developing diverse on-chip laser arrays, enabling applications such as on-chip wavelength division multiplexing.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Melvina Chen, Hyo-Jun Joo, Eng-Huat Toh, Elgin Quek, Zoran Ikonic, Wei Du, Shui-Qing Yu, and Donguk Nam "Strain-engineered GeSn microlasers with lithographically adjustable emission wavelengths", Proc. SPIE 13002, Semiconductor Lasers and Laser Dynamics XI, 1300209 (20 June 2024); https://doi.org/10.1117/12.3017723

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