Fabrication and characterization of bolometer type uncooled IRFPAs using semi-conducting SWCNT networks in VGA formats

Tomo Tanaka; Masahiko Sano; Masataka Noguchi; Takashi Miyazaki; Megumi Kanaori; Toshie Miyamoto; Naoki Oda; Ryota Yuge

doi:10.1117/12.3013076

7 June 2024 Fabrication and characterization of bolometer type uncooled IRFPAs using semi-conducting SWCNT networks in VGA formats

Tomo Tanaka, Masahiko Sano, Masataka Noguchi, Takashi Miyazaki, Megumi Kanaori, Toshie Miyamoto, Naoki Oda, Ryota Yuge

Author Affiliations +

Proceedings Volume 13046, Infrared Technology and Applications L; 130460X (2024) https://doi.org/10.1117/12.3013076
Event: SPIE Defense + Commercial Sensing, 2024, National Harbor, Maryland, United States

Abstract

In this study, we fabricated bolometer-type uncooled infrared focal plane allays (IRFPAs) of 640 × 480 pixels with high-purity semi-conducting single-walled carbon nanotubes (SWCNTs) as detection materials for the first time. The thermal isolation structure of the IRFPAs for high responsivity was realized by creating a cavity between the contact electrode and the infrared detection part and by connecting them with beam wiring. The infrared detection part was formed in the order of SiN_x film, semiconducting SWCNT network film, SiO₂ film, and SiN_x film from the bottom. Especially the SWCNT network film was only formed by a printing process except for the fabrication process in micro electro mechanical systems (MEMS). Here, our semi-conducting SWCNTs, which is a dispersion containing a nonionic surfactant, formed a high-density film with locally-oriented structure by the coating process. The responsivity and thermal time constant of typical element in long-wave IR region showed over 10⁵ (V/W) @0.2 V and 5 ms, respectively. Assuming the thermal conductance and infrared absorption rate, temperature coefficient of resistance (TCR) was estimated as above -5%/K. The TCR value was similar with that of semi-conducting SWCNT network film prepared on Si substrate and about three times larger than that of conventional vanadium oxide film. Therefore, we found that semi-conducting SWCNTs become a promising bolometer material that can achieve high sensitivity.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Tomo Tanaka, Masahiko Sano, Masataka Noguchi, Takashi Miyazaki, Megumi Kanaori, Toshie Miyamoto, Naoki Oda, and Ryota Yuge "Fabrication and characterization of bolometer type uncooled IRFPAs using semi-conducting SWCNT networks in VGA formats", Proc. SPIE 13046, Infrared Technology and Applications L, 130460X (7 June 2024); https://doi.org/10.1117/12.3013076

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