Paper
28 February 2024 The finite element method was used to analyze the sensitivity of piezoresistive pressure sensors in micro-electro-mechanical system
Pengfei Li, Shuangjie Liu
Author Affiliations +
Proceedings Volume 13071, International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023); 1307120 (2024) https://doi.org/10.1117/12.3025621
Event: International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023), 2023, Shenyang, China
Abstract
With the development of technology, the pressure sensor in MEMS system is required to be small in size and high in accuracy, but the experiment is difficult and the error is large. In this paper, the finite element method is used to analyze a silicon-based pressure sensor model composed of a square film with an edge length of 1 mm, a thickness of 20 m, a p-type doping density of 1.321019 cm-3 and a thickness of 400 nm, and the output voltage sensitivity of the silicon-based pressure sensor model is 0.6mV/kPa at 0-100 Kpa, which meets the requirements of high sensitivity and linearity of MEMS pressure sensor.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Pengfei Li and Shuangjie Liu "The finite element method was used to analyze the sensitivity of piezoresistive pressure sensors in micro-electro-mechanical system", Proc. SPIE 13071, International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023), 1307120 (28 February 2024); https://doi.org/10.1117/12.3025621
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KEYWORDS
Sensors

Piezoresistivity

Silicon

Analytic models

Film thickness

Finite element methods

Doping

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