Silicon is a ubiquitous material in electronics, yet its implementation in opto-electronic devices is significantly less prominent due to its underwhelming optical properties compared to other semiconducting materials. In this presentation, we discuss novel strategies for improving light absorption in silicon at the nanoscale. First, we show that the principle of photon confinement on the nanometer scale enables new transitions in silicon that are otherwise momentum-forbidden, providing a mechanism for absorption enhancement by several orders of magnitude. Second, we offer new approaches for enhancing two-photon absorption in silicon and show that such strategies can be used for rapid mid-infrared imaging with Si-based cameras.
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