Presentation + Paper
1 October 2024 3D rectification effect in grating-gate InGaAs-channel HEMT THz plasmonic detectors
Author Affiliations +
Abstract
We review our recent studies on a newly discovered three-dimensional (3D) rectification effect in grating-gate InGaAs-channel High-Electron-Mobility Transistor (HEMT) THz plasmonic detectors. We demonstrate that the detector internal responsivity can be exponentially enhanced under a forward (positive) bias voltage application in the gate-readout configuration. Also, we demonstrate that the dc potential rise in the channel due to a strong dc current flow causes the degradation of the internal responsivity and can be suppressed by an appropriate grounding structure for the channel. A record internal responsivity of 1.2 A/W at 0.8 THz for grating-gate plasmonic detectors was achieved.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
A. Satou and T. Otsuji "3D rectification effect in grating-gate InGaAs-channel HEMT THz plasmonic detectors", Proc. SPIE 13141, Terahertz Emitters, Receivers, and Applications XV, 1314106 (1 October 2024); https://doi.org/10.1117/12.3029292
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KEYWORDS
Terahertz radiation

Plasmonics

Millimeter wave sensors

Field effect transistors

Sensors

Active sensors

Diodes

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