Development of next generation EUV mask blanks

Takahiro Onoue; Yohei Ikebe; Hirofumi Kozakai; Haruka Amemiya; Tatsuya Sasaki; Ryotaro Takeuchi; Tsutomu Shoki

doi:10.1117/12.3034338

26 August 2024 Development of next generation EUV mask blanks

Takahiro Onoue, Yohei Ikebe, Hirofumi Kozakai, Haruka Amemiya, Tatsuya Sasaki, Ryotaro Takeuchi, Tsutomu Shoki

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 1317702 (2024) https://doi.org/10.1117/12.3034338
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

The first generation of EUV masks, largely based on Tantalum, were a key enabler for the success of EUV lithography. Continuous improvements in defectivity, zero phase defects are now realized and EUV reflectivity has allowed use of the 3nm node. Beyond this node, further advances in blank materials are required and similar to optical imaging, the use of resolution enhancement techniques are necessary; referred to as low-n blanks for EUV imaging. Key aspects include imaging performance, defects, durability and mask manufacturability, and involve refined absorbers and capping layers. In this paper, we overview our effort to design and accomplish the EUV blanks design that meets criteria from industry. We will also describe the challenges for next generation EUV blanks.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Takahiro Onoue, Yohei Ikebe, Hirofumi Kozakai, Haruka Amemiya, Tatsuya Sasaki, Ryotaro Takeuchi, and Tsutomu Shoki "Development of next generation EUV mask blanks", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 1317702 (26 August 2024); https://doi.org/10.1117/12.3034338

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KEYWORDS

Extreme ultraviolet

Extreme ultraviolet lithography

Tantalum

Multilayers

EUV optics

Hydrogen

Optical properties

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