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The aim of the paper is to review the main achievements in the research of HgCdTe ternary alloy and InAs/InAsSb type-II superlattice material to indicate the Polish contribution to the development of medium and long wavelength infrared photodetectors. Research and development efforts in the WAT-VIGO joint laboratory have focused on the metal-organic chemical vapor deposition (from 2003) and molecular beam epitaxy (from 2015). At present stage of development, the photoconductive and photovoltaic HgCdTe detectors are gradually replaced with novel device designs based on III-V material system. T2SL devices complement the offer of MCT ones in applications where it is necessary to ensure, among others: higher resistance to difficult operating conditions and high uniformity of parameters of multi-element detectors.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Małgorzata Kopytko,Jan Sobieski,Karol Dąbrowski,Waldemar Gawron, andJózef Piotrowski
"Latest development on IR detector technology at WAT-VIGO laboratory", Proc. SPIE 13200, Electro-Optical and Infrared Systems: Technology and Applications XXI, 132000W (1 November 2024); https://doi.org/10.1117/12.3033051
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Małgorzata Kopytko, Jan Sobieski, Karol Dąbrowski, Waldemar Gawron, Józef Piotrowski, "Latest development on IR detector technology at WAT-VIGO laboratory," Proc. SPIE 13200, Electro-Optical and Infrared Systems: Technology and Applications XXI, 132000W (1 November 2024); https://doi.org/10.1117/12.3033051