Enabling 0.33NA EUV lithography patterning towards MP16 SADP semi-damascene metallization, setting the benchmark for High-NA EUV

Yannick Hermans; Stefan Decoster; Chen Wu; Jan Doise; Vincent Renaud; Dieter Van Den Heuvel; Seongho Park; Paulina Rincon-Delgadillo; Zsolt Tőkei

doi:10.1117/12.3034200

12 November 2024 Enabling 0.33NA EUV lithography patterning towards MP16 SADP semi-damascene metallization, setting the benchmark for High-NA EUV

Yannick Hermans, Stefan Decoster, Chen Wu, Jan Doise, Vincent Renaud, Dieter Van Den Heuvel, Seongho Park, Paulina Rincon-Delgadillo, Zsolt Tőkei

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150R (2024) https://doi.org/10.1117/12.3034200
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

To accommodate the A10 node a further scaling down of the metal line pitch towards MP16 is envisaged. As high NA will be close to its practical limit for direct P16 L/S patterning, low NA self-aligned double patterning (SADP) from P32 towards P16 was explored. First, lithography conditions such as source and stack were optimized by investigating process windows, uLER/uLWR and ebeam defectivity throughout the P32 core patterning process. Then, with the optimized lithography conditions a CDU wafer was subjected to SADP patterning.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yannick Hermans, Stefan Decoster, Chen Wu, Jan Doise, Vincent Renaud, Dieter Van Den Heuvel, Seongho Park, Paulina Rincon-Delgadillo, and Zsolt Tőkei "Enabling 0.33NA EUV lithography patterning towards MP16 SADP semi-damascene metallization, setting the benchmark for High-NA EUV", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150R (12 November 2024); https://doi.org/10.1117/12.3034200

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