CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 13216 > Article
Presentation
13 November 2024 Study of low-sensitivity EB resist for future generation
Kei Yamamoto, K. Takahashi, K. Takeda
Author Affiliations +
Proceedings Volume 13216, Photomask Technology 2024; 1321619 (2024) https://doi.org/10.1117/12.3034461
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States
Abstract
EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. One of the most critical issues for EB lithography process is the stochastic issue which is induced by low density of quanta due to high energy of e-beam exposure. Such stochastic can induce the heterogeneity of various reactions in the photoresist. As a result, serious performance degradation is caused in key lithographic areas such as LWR (line width roughness) , LCDU (local critical dimension uniformity), and resolution. It’s well known that quanta stochastic can be reduced by high dose condition. Thus, demand of high dose EB resist has been risen for further performance improvement. However, it's also well known that the side-reaction, such as cross-linking, is occurred in the PHS(polyhydroxystyrene) based polymer on the high dose e-beam condition, which is comprised in the typical positive-tone chemically amplified resist (PCAR). In this study, several PCAR formulations with the different materials were studied under Point-beam and MBMW (multi-beam mask writer) conditions to investigate the lithographic performance of low sensitivity PCAR. We have developed the new high acid generation PCAR showing the good LCDU and resolution under the multi-beam condition on mask process. It enables “CAR extension” toward future generation for leading-edge mask production.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Kei Yamamoto, K. Takahashi, and K. Takeda "Study of low-sensitivity EB resist for future generation", Proc. SPIE 13216, Photomask Technology 2024, 1321619 (13 November 2024); https://doi.org/10.1117/12.3034461
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
;
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Extreme ultraviolet
Stochastic processes
Lithography
Electron beam lithography
Line width roughness
Chemically amplified resists
Electron beams
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top