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13 November 2024 Co-optimization of photomask exposure conditions and MPC
Michael Erickson, Mahesh Chandramouli, Alex Johnson, Michael Mroz, Vlad Liubich, Zach Rice, Arvind Sundaramurthy, Kushlendra Mishra, Rachit Sharma, Ingo Bork, Alex Wei, Jörg Mellmann, Jiechang Hou
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Proceedings Volume 13216, Photomask Technology 2024; 132161S (2024) https://doi.org/10.1117/12.3038102
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States
Abstract
Meeting the CD (Critical Dimension) linearity and uniformity targets for high-NA EUV photomasks, requires tight control of a wide range of effects contributing to the distortion of the CD signature. So far, many of the factors degrading CD signature have been optimized independently, in particular the compensation of short- and long-range scattering and etch bias effects. Such independent optimization, however, limits the overall mask CD linearity and uniformity results achievable with co-optimization of the different components. In this work, we discuss the co-optimization of short- and long-range corrections on the e-beam writer and through MPC (Mask Process Correction).
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Michael Erickson, Mahesh Chandramouli, Alex Johnson, Michael Mroz, Vlad Liubich, Zach Rice, Arvind Sundaramurthy, Kushlendra Mishra, Rachit Sharma, Ingo Bork, Alex Wei, Jörg Mellmann, and Jiechang Hou "Co-optimization of photomask exposure conditions and MPC", Proc. SPIE 13216, Photomask Technology 2024, 132161S (13 November 2024); https://doi.org/10.1117/12.3038102
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KEYWORDS
Critical dimension metrology
Photomasks
SRAF
Bias correction
Printing
Scattering
Extreme ultraviolet
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