Paper
8 November 2024 High-power 808nm VCSEL arrays for Nd:YAG pumping
Yang Li, Chuanchuan Li, Chongxian Yuan, Yongli Wang, Xin Wei, Lianghui Chen
Author Affiliations +
Abstract
High power large-scale single junction 808nm VCSEL arrays were fabricated at a chip size of 5.1mm×6mm with regular 100µm thickness substrate and packaged on commercial AlN submounts. The CW optical power was tested up to 100W from a single chip with maximum PCE of 44% and slope efficiency of 1.2W/A. The QCW optical power was tested up to 270W from a single chip with maximum PCE of 50% and slope efficiency of 1.35W/A. This is one of the best performances for high power VCSEL chips for commercial delivery. Side-pumped Nd:YAG laser was designed with these VCSEL chips and experiment was proceeded. High optical-to-optical pumping efficiency of 45% was calculated and the implied Nd:YAG stored energy was up to joules level. These experiments showed great potential for the high power VCSEL chips for Nd:YAG laser pumping and also offered great possibility for volume production and commercial delivery in the near future.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yang Li, Chuanchuan Li, Chongxian Yuan, Yongli Wang, Xin Wei, and Lianghui Chen "High-power 808nm VCSEL arrays for Nd:YAG pumping", Proc. SPIE 13233, Semiconductor Lasers and Applications XIV, 132330P (8 November 2024); https://doi.org/10.1117/12.3054213
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KEYWORDS
Vertical cavity surface emitting lasers

Nd:YAG lasers

Chip manufacturing

Continuous wave operation

High power lasers

Semiconductor lasers

Diode pumped solid state lasers

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