Poster + Paper
8 November 2024 Single-mode surface grating semiconductor laser fabricated by i-line projection photolithography
Bi-Wei Hu, Jin-Long Xiao, Yue-De Yang, Yong-Zhen Huang
Author Affiliations +
Conference Poster
Abstract
The study presents the design, fabrication, and testing of the 4th-order surface grating laser with a focus on achieving stable single-mode emission. This approach contrasts with traditional high-order surface gratings, aiming to minimize loss and enhance the yield of single-mode operations. The laser device showcases a remarkable single-mode performance, with an injection current of IFP = 57 mA and IGrating = 20 mA, achieving a side mode suppression ratio of 56.97 dB. The threshold current remains around 11 mA, reaching a peak power output of 5 mW. The experimental results highlight the potential of using low-order surface gratings for efficient single-mode lasers, streamlining the fabrication process while enhancing device performance.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Bi-Wei Hu, Jin-Long Xiao, Yue-De Yang, and Yong-Zhen Huang "Single-mode surface grating semiconductor laser fabricated by i-line projection photolithography", Proc. SPIE 13233, Semiconductor Lasers and Applications XIV, 132330S (8 November 2024); https://doi.org/10.1117/12.3035818
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KEYWORDS
Etching

Waveguides

Fabrication

Reflection

Optical gratings

Semiconductor lasers

Optical lithography

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