Structural changes investigation based on LVTSCR with deep n-type well

Hongke Tao; Yang Wang; Zhiwen Zeng; Wei Liu; Shuang Li; Zhiqin Deng

doi:10.1117/12.3039840

28 August 2024 Structural changes investigation based on LVTSCR with deep n-type well

Hongke Tao, Yang Wang, Zhiwen Zeng, Wei Liu, Shuang Li, Zhiqin Deng

Author Affiliations +

Proceedings Volume 13251, Ninth International Conference on Electromechanical Control Technology and Transportation (ICECTT 2024); 132510L (2024) https://doi.org/10.1117/12.3039840
Event: 9th International Conference on Electromechanical Control Technology and Transportation (ICECTT 2024), 2024, Guilin, China

Abstract

In this paper, we propose a Low Voltage Trigger Silicon Controlled Rectifier (LVTSCR) device based on LVTSCR with Deep N-type well (DNW) isolation, realized by embedding reverse diode into the device, operating an additional parasitic PNP bipolar junction transistor (BJT) in the anode terminal and adding an extra N-well(NW)region. The proposed electrostatic discharge (ESD) protection device was developed through a 0.18μm Bipolar CMOS-DMOS (BCD) process. According to the analysis of TCAD simulation and measurement results of transmission line pulse (TLP) testing system, the LVTSCR embedded reverse diode reduces the slope of the reverse TLP I-V curve, which can effectively reduce the reverse conduction resistance. On the basis of the LVTSCR embedded reverse diode, when the additional parasitic PNP BJT operates in the anode terminal, the performance of this device is basically not affected. But the holding voltage of the LVTSCR embedded reverse diode can be improved by inserting additional NW with different widths in the P-well.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hongke Tao, Yang Wang, Zhiwen Zeng, Wei Liu, Shuang Li, and Zhiqin Deng "Structural changes investigation based on LVTSCR with deep n-type well", Proc. SPIE 13251, Ninth International Conference on Electromechanical Control Technology and Transportation (ICECTT 2024), 132510L (28 August 2024); https://doi.org/10.1117/12.3039840

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