Growth and fabrication of GaAs-based InAs/AlSb resonant tunneling diode

Qiuyao Pang; Donghai Wu; Jianxing Xu; Xiangbin Su; Yingqiang Xu; Guowei Wang; Haiqiao Ni; Zhichuan Niu

doi:10.1117/12.3038956

11 October 2024 Growth and fabrication of GaAs-based InAs/AlSb resonant tunneling diode

Qiuyao Pang, Donghai Wu, Jianxing Xu, Xiangbin Su, Yingqiang Xu, Guowei Wang, Haiqiao Ni, Zhichuan Niu

Proceedings Volume 13287, Nineteenth National Conference on Laser Technology and Optoelectronics; 1328713 (2024) https://doi.org/10.1117/12.3038956
Event: Nineteenth National Conference on Laser Technology and Optoelectronics, 2024, Shanghai, China

Abstract

With optimized buffer design, we demonstrate a new InAs/AlSb resonant tunneling diode (RTD) on lattice-unmatched semi-insulating (SI) GaAs (100) substrates aiming for terahertz oscillators. To obtain high crystal quality and smooth surface, 5 periods InGaAs/GaAs (2ML/2ML) superlattices (SLs) buffer layer was used as dislocation filters (DFs). Xray diffraction (XRD) measurement showed the full width at half maximum (FWHM) of 331arcsec and surface roughness of 2.4nm over 10μm×10μm. 8-μm-diam diodes were fabricated by standard mesa process. I-V characteristic of the diodes shows negative conductivity at room temperature and a peak current density of 1.79×105A • cm^-2 was achieved.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Qiuyao Pang, Donghai Wu, Jianxing Xu, Xiangbin Su, Yingqiang Xu, Guowei Wang, Haiqiao Ni, and Zhichuan Niu "Growth and fabrication of GaAs-based InAs/AlSb resonant tunneling diode", Proc. SPIE 13287, Nineteenth National Conference on Laser Technology and Optoelectronics, 1328713 (11 October 2024); https://doi.org/10.1117/12.3038956

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