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16 October 2024 Suppressing SiC MOSFET switching overshoot and oscillation with an on-chip integrated active gate driver
Qunshan Liang, Mingyan Yu, Shihua Tang, Xiongzhi Dai, Songlin Bai, Chuanzheng Wang
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Proceedings Volume 13291, Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024); 132910D (2024) https://doi.org/10.1117/12.3033529
Event: Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024), 2024, Changchun, China
Abstract
Power silicon carbide (SiC) MOSFETs are gradually replacing silicon-based power devices in industrial production due to their higher switching speed, lower switching loss, and higher operating temperature capabilities, especially in high power density and high-efficiency power electronic applications. However, the higher switching speed also brings about issues such as voltage and current overshoots, oscillations. This paper proposes an on-chip integrated active gate driver for SiC MOSFETs, the principle of this circuit is to turn off some PMOS/NMOS during the switching process, which has a significant impact on the above problems, to reduce the driving current, in the stage where the impact on the above problems is insignificant, more PMOS/NMOS are turned on to increase the driving current, this approach aims to mitigate overshoots, oscillations, while maximizing the switching speed and minimizing power consumption. Compared to PCB-level active gate drivers, the on-chip integrated active gate driver have advantages in terms of reducing size, decreasing delay, and lowering application complexity. Finally, simulation results of the proposed driver under various conditions are provided.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Qunshan Liang, Mingyan Yu, Shihua Tang, Xiongzhi Dai, Songlin Bai, and Chuanzheng Wang "Suppressing SiC MOSFET switching overshoot and oscillation with an on-chip integrated active gate driver", Proc. SPIE 13291, Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024), 132910D (16 October 2024); https://doi.org/10.1117/12.3033529
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KEYWORDS
Field effect transistors
Silicon carbide
Circuit switching
Switching
Inductance
Signal processing
Diodes
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