Circuit module design based on computing In memory

Yongjian Chai; Lijun Zhang; Dongdong Xie

doi:10.1117/12.3033994

16 October 2024 Circuit module design based on computing In memory

Yongjian Chai, Lijun Zhang, Dongdong Xie

Author Affiliations +

Proceedings Volume 13291, Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024); 132911W (2024) https://doi.org/10.1117/12.3033994
Event: Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024), 2024, Changchun, China

Abstract

This article aims to design an SRAM circuit with in memory operation function, and proposes a multiplication operation structure, including an in memory operation storage unit and an output pre charging circuit. This structure needs to be coordinated with other modules of the circuit for in memory calculation. The memory operation unit includes a transmission unit and a 6T-SRAM cell. The 6T-SRAM cell is used for writing weights, and the transmission unit is used for performing multiplication operations between weights and input signals, and transmitting the calculation results to the output pre charging circuit. This scheme can reduce the number of transistors required for in memory computing, thereby achieving the goal of reducing circuit area.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yongjian Chai, Lijun Zhang, and Dongdong Xie "Circuit module design based on computing In memory", Proc. SPIE 13291, Ninth International Symposium on Advances in Electrical, Electronics, and Computer Engineering (ISAEECE 2024), 132911W (16 October 2024); https://doi.org/10.1117/12.3033994

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