SiC MOSFET study on the static characteristics of models affected by temperature

Fan Xu

doi:10.1117/12.3054435

20 January 2025 SiC MOSFET study on the static characteristics of models affected by temperature

Fan Xu

Author Affiliations +

Proceedings Volume 13515, Fourth International Conference on Advanced Manufacturing Technology and Electronic Information (AMTEI 2024); 135151E (2025) https://doi.org/10.1117/12.3054435
Event: 4th International Conference on Advanced Manufacturing Technology and Electronic Information (AMTEI 2024), 2024, Chongqing, China

Abstract

With the continuous development of science and technology, the performance requirements of power electronic devices are getting higher and higher, so the wide band gap devices based on SiC devices are gradually widely used in many fields. This paper introduces the basic working principle of SiC MOSFET and the parameter characteristics under the influence of temperature, studies the influence mechanism of threshold voltage, transconductance, on-resistance and temperature control source of SiC MOSFET model under different temperatures, and establishes the equivalent circuit model for simulation verification. The static characteristics of SiC MOSFET is significantly temperature-sensitive, with transconductance and gate-source resistance increasing with temperature, and the change in on-resistance is regulated by gate voltage and temperature.

(2025) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Fan Xu "SiC MOSFET study on the static characteristics of models affected by temperature", Proc. SPIE 13515, Fourth International Conference on Advanced Manufacturing Technology and Electronic Information (AMTEI 2024), 135151E (20 January 2025); https://doi.org/10.1117/12.3054435

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