Paper
1 March 1991 Generic applications for Si and GaAs optical switching devices utilizing semiconductor lasers as an optical source
Arye Rosen, Paul J. Stabile, Fred J. Zutavern, Guillermo M. Loubriel
Author Affiliations +
Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25053
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
Abstract
Switches comprising semiconductor devices such as GaAs or Si switch devices and semiconductor lasers as activating devices are small efficient and reasonable in cost. Optically controlled Si PIN or bulk devices having long carrier lifetime switch cw high power signals in broad-band RF applications. They utilize pulsed laser diode arrays that require low average power. A cw HF switch was obtained utilizing a twodimensional (2-D) laser array that was pulse biased to 10 kHz. Optically activated GaAs devices with nano-second risetimes which utilize the phenomenon of lock-on are used for mega-watt switching applications such as impulse radar and firesets. A new high impedance 2-D laser array which was switched on in 700 Ps and delivered a peak power of 545W has also been achieved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arye Rosen, Paul J. Stabile, Fred J. Zutavern, and Guillermo M. Loubriel "Generic applications for Si and GaAs optical switching devices utilizing semiconductor lasers as an optical source", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25053
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconductor lasers

Switches

Switching

Gallium arsenide

Diodes

Silicon

PIN photodiodes

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