New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties

N. A. Charykov; Alexandr M. Litvak; Konstantin D. Moiseev; Yury P. Yakovlev

doi:10.1117/12.47163

1 September 1991 New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties

N. A. Charykov, Alexandr M. Litvak, Konstantin D. Moiseev, Yury P. Yakovlev

Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47163
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

The phase diagram of the quaternary AlInAsSb system has been investigated. These data have been used for LPE growth of the AlxIn1-xAsySb1-y solid solutions lattice-matched to InAs (with Al mole percentage in the range 0.0-0.08). A band gap was determined for this material in dependence on the composition by photoluminescence measurements. The band gap of the solid solution in the investigated range of composition corresponds to a wavelength from 3 micrometers (x equals 0.0, Eg equals 0.414 eV) to 2.5 micrometers (x equals 0.08, Eg equals 0.49 eV).

Citation Download Citation

N. A. Charykov, Alexandr M. Litvak, Konstantin D. Moiseev, and Yury P. Yakovlev "New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47163

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available