Paper
1 November 1991 Ionization potentials effects on CGL/CTL photoconductors
Xiao Dong Shi
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47321
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
This paper presents photoconductive data of several p-type CTL materials--oxazoles, and gives brief discussions concerning their ionization potential Ip and photosensitivity. The Ip values were from the quantum quantitative calculation and the polarographic oxidation potentials, respectively. The photoreceptors using oxazoles as CTL materials showed high sensitivities. A simple correlation was obtained between the Ip values of the CTL materials and the photosensitivities, although the results cannot be explained very clearly.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao Dong Shi "Ionization potentials effects on CGL/CTL photoconductors", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47321
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KEYWORDS
Ionization

Molecules

Oxidation

Physics

Thin films

Photoresistors

Coating

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