Characterization and preparation of high-Tc YBa2Cu3O7-x thin films on Si with conducting indium oxide as a buffer layer

Z. J. Zhang; Wei Luo; Y. Y. Zeng; N. P. Yang; Y. M. Cai; X. L. Shen; H. S. Chen; Zhongyi Hua

doi:10.1117/12.47316

1 November 1991 Characterization and preparation of high-T_c YBa₂Cu₃O_7-x thin films on Si with conducting indium oxide as a buffer layer

Z. J. Zhang, Wei Luo, Y. Y. Zeng, N. P. Yang, Y. M. Cai, X. L. Shen, H. S. Chen, Zhongyi Hua

Author Affiliations +

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47316
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The superconducting YBCO thin films have been successfully prepared by DC magnetion sputtering on silicon substrates with a metallic conductive oxide In₂O₃ as a buffer layer. The substrate temperature was kept at about 650 degree(s)C during deposition and a subsequent in-situ annealing in oxygen was performed at 450 degree(s)C. The YBCO film on In₂O₃/Si exhibits zero resistance at 72 degree(s) K. The interface between Si and In₂O₃ was tested by Rutherford back scattering (RBS) and the characteristics of the YBCO thin films were also examined by x-ray diffraction (XRD).

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Z. J. Zhang, Wei Luo, Y. Y. Zeng, N. P. Yang, Y. M. Cai, X. L. Shen, H. S. Chen, and Zhongyi Hua "Characterization and preparation of high-T_c YBa₂Cu₃O_7-x thin films on Si with conducting indium oxide as a buffer layer", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47316

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