Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations

Etienne J. Petit; Y. Caudano; A. Gouskov; Georges Bougnot

doi:10.1117/12.56926

1 February 1992 Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations

Etienne J. Petit, Y. Caudano, A. Gouskov, Georges Bougnot

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56926
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Surface cleaning by pulsed UV-laser (wavelength = 193 nm) annealing in vacuo and laser-enhanced oxidation of GaSb single crystals in air are investigated by Auger and X-ray photoelectron spectroscopies. Superficial etching observed below energy densities of 100 mJ/cm2 is due to desorption of the Sb-oxides stimulated by photolysis. Above this threshold, the remaining Ga oxides are burried into the melted layer. The photolysis of the oxide also stimulates a layer-by-layer oxidation when GaSb is irradiated in air at lower energy densities (1 to 3 mJ/cm2 ).

Citation Download Citation

Etienne J. Petit, Y. Caudano, A. Gouskov, and Georges Bougnot "Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56926

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