Wafer emissivity correction using dual-color pyrometry

David Mordo; Yuval Wasserman; Arnon Gat

doi:10.1117/12.56662

1 February 1992 Wafer emissivity correction using dual-color pyrometry

David Mordo, Yuval Wasserman, Arnon Gat

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56662
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A novel dual color pyrometry method forcorrecting wafer-to-waferemissivity changes during rapid thermal processing (RiP) is discussed. This new technique, using a system called TRAC (Temperature Repeatability with Automatic Control) addresses a key issue affecting the reproducibility of RTP production applications: accurate temperature measurement and control. The effect of this new emissivity correction method on reproducibility ofrapid thermal oxidation (RTO) and ion implant rapid thermal activation (RTA) of wafers with varying emissivities is presented. The results demonstrate significant improvement oftemperature control and temperature repeatability from wafer-to-wafer both for RTO and short RTA processes when in situ emissivity correction is applied.

Citation Download Citation

David Mordo, Yuval Wasserman, and Arnon Gat "Wafer emissivity correction using dual-color pyrometry", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56662

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