Growth and characterization of high quality strained GaAs Epitaxial Layers

S. Dhar; Kanad Mallik

doi:10.1117/12.636814

16 December 1992 Growth and characterization of high quality strained GaAs Epitaxial Layers

S. Dhar, Kanad Mallik

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636814
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Iritum arxi antincny-dcped strain layers of GaAs grcn by liquid phase epitaxy are st3.ted hy phcal, electrical and cçtical techniques . Doping ranges to obtain lci dislocaticri dsity GaAs are assessed. Nz deep levels associat1 with irx1izn arx antinony dopants are identified by photocurrent technique, and their possible origins are discussed.

Citation Download Citation

S. Dhar and Kanad Mallik "Growth and characterization of high quality strained GaAs Epitaxial Layers", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636814

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available