High-power single-mode strained-layer lasers emitting at 980 nm

Hal A. Zarem; Joel S. Paslaski; Michael Mittelstein; Jeffrey E. Ungar; Israel Ury

doi:10.1117/12.59146

26 June 1992 High-power single-mode strained-layer lasers emitting at 980 nm

Hal A. Zarem, Joel S. Paslaski, Michael Mittelstein, Jeffrey E. Ungar, Israel Ury

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59146
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Highpower single mode InGaAs lasers for emitting at 980mn have been developed. Life test data and failure analysis results are discussed. Coupling efficiency into single mode fiber as a function of beam ellipticity is also studied.

Citation Download Citation

Hal A. Zarem, Joel S. Paslaski, Michael Mittelstein, Jeffrey E. Ungar, and Israel Ury "High-power single-mode strained-layer lasers emitting at 980 nm", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59146

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