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Infrared reflectance between 4000 and 100 cm-1 and optical spectra between 1.8 and 6.2 eV of high purity silica implanted with nominal doses of 1, 3, and 6 X 1016 Pb ions/cm2 were recorded before and after annealing at 400, 600, and 800 degree(s) C for 1 hour. Curve resolution analysis of the Si-O stretching region resulted in six peaks which were characterized by their lineshape parameters. The oscillator strength of the ion induced defect peak at 1035 cm-1 was found to depend on ion dose. The defect band at 1035 cm-1 decreased to an intensity comparable to that of the unimplanted glass after thermal annealing for 1 hour at 800 degree(s) C. Far infrared spectra indicated the formation of lead silicate particles after annealing.
Don Otto Henderson,Steven H. Morgan,Richard Mu,Robert H. Magruder III,T. S. Anderson,J. E. Wittig, andRay A. Zuhr
"Optical and infrared spectra of thermally annealed Pb-implanted SiO2 glasses", Proc. SPIE 1761, Damage to Space Optics, and Properties and Characteristics of Optical Glass, (11 January 1993); https://doi.org/10.1117/12.138927
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Don Otto Henderson, Steven H. Morgan, Richard Mu, Robert H. Magruder III, T. S. Anderson, J. E. Wittig, Ray A. Zuhr, "Optical and infrared spectra of thermally annealed Pb-implanted SiO2 glasses," Proc. SPIE 1761, Damage to Space Optics, and Properties and Characteristics of Optical Glass, (11 January 1993); https://doi.org/10.1117/12.138927