Disorder of GaAs single crystals resulting from heat treatment

A. N. Akimov; L. A. Vlasukova

doi:10.1117/12.131034

1 August 1992 Disorder of GaAs single crystals resulting from heat treatment

A. N. Akimov, L. A. Vlasukova

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131034
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

By means of Raman scattering spectroscopy and selective etching, point defect redistribution and change of crystalline matrix in annealed GaAs crystals was discovered. The temperature interval of most structure changes for each group of investigated crystals has been defined.

Citation Download Citation

A. N. Akimov and L. A. Vlasukova "Disorder of GaAs single crystals resulting from heat treatment", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131034

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