Simulation of 1/f alpha noise of semiconductor devices

Lech Z. Hasse

doi:10.1117/12.131007

1 August 1992 Simulation of 1/f^α noise of semiconductor devices

Lech Z. Hasse

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131007
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The 1/f^(alpha ) noise model of semiconductor devices as a result of the summation of many burst noise components with different characteristic frequencies f_oi as well as its physical interpretation for a p-n junction has been presented. The error of spectrum representation depends on the density of frequencies f_oi (per unit frequency) and the bandwidth depends on the number of components N. A change of exponent (alpha) has been achieved by the exponential distribution of frequencies f_oi. For random number generation, the power-residue generator has been applied. The computer program during initialization calculates the required number of components N, number of the time samples K, and duration of the simulation process for the assumed value of an error.

Citation Download Citation

Lech Z. Hasse "Simulation of 1/f^α noise of semiconductor devices", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131007

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