Study of the development of failure processes of MOS (MES) LSIC active structures with the help of surface acoustic waves

Anatoly P. Dostanko; Victor M. Ivkin; I. P. Salnikova

doi:10.1117/12.131012

1 August 1992 Study of the development of failure processes of MOS (MES) LSIC active structures with the help of surface acoustic waves

Anatoly P. Dostanko, Victor M. Ivkin, I. P. Salnikova

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131012
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

A simulation method of development processes of LSIC element failures, based on the introduction of surface acoustic waves (SAW) into a semiconductor chip with supply voltage and electric test actions applied simultaneously is proposed. It is shown that the degradation process intensification is achieved due to the increase of the degree of the state nonequilibrium of crystal lattice atoms resulting in the decrease of the threshold energy necessary for their participation in the degradation process. An analytical expression allowing the evaluation of test regimes, and, in the first place, the SAW amplitude, ensuring carrying out the test for a given period of time has been obtained. A test cell, the test results are given.

Citation Download Citation

Anatoly P. Dostanko, Victor M. Ivkin, and I. P. Salnikova "Study of the development of failure processes of MOS (MES) LSIC active structures with the help of surface acoustic waves", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131012

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